型号:

STD5N62K3

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 620V 4.2A DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STD5N62K3 PDF
其它有关文件 STD5N62K3 View All Specifications
标准包装 2,500
系列 SuperMESH3™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 620V
电流 - 连续漏极(Id) @ 25° C 4.2A
开态Rds(最大)@ Id, Vgs @ 25° C 1.6 欧姆 @ 2.1A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 50µA
闸电荷(Qg) @ Vgs 26nC @ 10V
输入电容 (Ciss) @ Vds 680pF @ 50V
功率 - 最大 70W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 D-Pak
包装 带卷 (TR)
其它名称 497-10778-2
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